IndiumV3, Russie, Analysis, bibRecord, 000806

Novel I-III-VI2 semiconductor-native protein structures and their photosensitivities

Identifieur interne : 000806 ( Russie/Analysis ); précédent : 000805; suivant : 000807

Novel I-III-VI2 semiconductor-native protein structures and their photosensitivities

Auteurs : RBID : Pascal:02-0572819

Descripteurs français

Pascal (Inist)
- Photosensibilité, Photoélectricité, Polarisation rectiligne, Eclairement, Bande interdite, Structure électronique, Photodétecteur, Semiconducteur, Hétérojonction, Composé ternaire, Cuivre séléniure, Indium séléniure, Cuivre sulfure, Indium sulfure, Cu In Se, CuInSe2, Cu In S, CuInS2, 8560G, AgInS2, Ag In S, CuGaS2, Cu Ga S.

English descriptors

KwdEn :
- Copper selenides, Copper sulfide, Electronic structure, Energy gap, Heterojunctions, Illumination, Indium selenides, Indium sulfide, Photodetector, Photoelectricity, Photosensitivity, Rectilinear polarization, Semiconductor materials, Ternary compound.

Abstract

Photosensitive semiconductor-native protein heterostructures have been obtained on CuInSe₂, CuInS₂, AgInS₂ and CuGaS₂ single crystals. The photoelectric properties of such structures have been studied under unpolarized and linearly polarized illumination. The obtained photosensitivity spectra of the heterostructures are of the broadband type and lie in the energy range between the energy gap of the semiconductor and the photon energy of 3.5 eV, which was accepted as being equal to the pseudo-energy gap in the electronic structure of protein. It is shown that the natural photopleochroism of the semiconductor is also reproduced in its contact with protein. We discuss possible future applications of the new photodetectors.

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Pascal:02-0572819

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Novel I-III-VI<sub>2</sub>
 semiconductor-native protein structures and their photosensitivities</title>
<author><name sortKey="Bodnar, I V" uniqKey="Bodnar I">I. V. Bodnar</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Belarus State University of Information Science and Radioelectronics</s1>
<s2>Minsk, 220027</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>Belarus State University of Information Science and Radioelectronics</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rud, V Yu" uniqKey="Rud V">V. Yu Rud</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State Polytechnical University, 29 Politekhnicheskaya</s1>
<s2>St Petersburg, 195251</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St Petersburg, 195251</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rud, Yu V" uniqKey="Rud Y">Yu V. Rud</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Ioffe Physico-Technical Institute, 26 Politekhnicheskaya</s1>
<s2>St Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St Petersburg, 194021</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0572819</idno>
<date when="2002">2002</date>
<idno type="stanalyst">PASCAL 02-0572819 INIST</idno>
<idno type="RBID">Pascal:02-0572819</idno>
<idno type="wicri:Area/Main/Corpus">00E355</idno>
<idno type="wicri:Area/Main/Repository">00EE07</idno>
<idno type="wicri:Area/Russie/Extraction">000806</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper selenides</term>
<term>Copper sulfide</term>
<term>Electronic structure</term>
<term>Energy gap</term>
<term>Heterojunctions</term>
<term>Illumination</term>
<term>Indium selenides</term>
<term>Indium sulfide</term>
<term>Photodetector</term>
<term>Photoelectricity</term>
<term>Photosensitivity</term>
<term>Rectilinear polarization</term>
<term>Semiconductor materials</term>
<term>Ternary compound</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photosensibilité</term>
<term>Photoélectricité</term>
<term>Polarisation rectiligne</term>
<term>Eclairement</term>
<term>Bande interdite</term>
<term>Structure électronique</term>
<term>Photodétecteur</term>
<term>Semiconducteur</term>
<term>Hétérojonction</term>
<term>Composé ternaire</term>
<term>Cuivre séléniure</term>
<term>Indium séléniure</term>
<term>Cuivre sulfure</term>
<term>Indium sulfure</term>
<term>Cu In Se</term>
<term>CuInSe2</term>
<term>Cu In S</term>
<term>CuInS2</term>
<term>8560G</term>
<term>AgInS2</term>
<term>Ag In S</term>
<term>CuGaS2</term>
<term>Cu Ga S</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Photosensitive semiconductor-native protein heterostructures have been obtained on CuInSe<sub>2</sub>
, CuInS<sub>2</sub>
, AgInS<sub>2</sub>
 and CuGaS<sub>2</sub>
 single crystals. The photoelectric properties of such structures have been studied under unpolarized and linearly polarized illumination. The obtained photosensitivity spectra of the heterostructures are of the broadband type and lie in the energy range between the energy gap of the semiconductor and the photon energy of 3.5 eV, which was accepted as being equal to the pseudo-energy gap in the electronic structure of protein. It is shown that the natural photopleochroism of the semiconductor is also reproduced in its contact with protein. We discuss possible future applications of the new photodetectors.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
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<fA02 i1="01"><s0>SSTEET</s0>
</fA02>
<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>17</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Novel I-III-VI<sub>2</sub>
 semiconductor-native protein structures and their photosensitivities</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>BODNAR' (I. V.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>RUD' (V. Yu)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>RUD' (Yu V.)</s1>
</fA11>
<fA14 i1="01"><s1>Belarus State University of Information Science and Radioelectronics</s1>
<s2>Minsk, 220027</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>State Polytechnical University, 29 Politekhnicheskaya</s1>
<s2>St Petersburg, 195251</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Ioffe Physico-Technical Institute, 26 Politekhnicheskaya</s1>
<s2>St Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>1044-1047</s1>
</fA20>
<fA21><s1>2002</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000102152760060</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2002 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>14 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>02-0572819</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Photosensitive semiconductor-native protein heterostructures have been obtained on CuInSe<sub>2</sub>
, CuInS<sub>2</sub>
, AgInS<sub>2</sub>
 and CuGaS<sub>2</sub>
 single crystals. The photoelectric properties of such structures have been studied under unpolarized and linearly polarized illumination. The obtained photosensitivity spectra of the heterostructures are of the broadband type and lie in the energy range between the energy gap of the semiconductor and the photon energy of 3.5 eV, which was accepted as being equal to the pseudo-energy gap in the electronic structure of protein. It is shown that the natural photopleochroism of the semiconductor is also reproduced in its contact with protein. We discuss possible future applications of the new photodetectors.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Photosensibilité</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Photosensitivity</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Fotosensibilidad</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="1" l="FRE"><s0>Photoélectricité</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="1" l="ENG"><s0>Photoelectricity</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Polarisation rectiligne</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Rectilinear polarization</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Polarización rectilínea</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Eclairement</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Illumination</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Alumbrado</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Bande interdite</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Energy gap</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Banda prohibida</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Structure électronique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Electronic structure</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Estructura electrónica</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Photodétecteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Photodetector</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Fotodetector</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Semiconducteur</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Semiconductor materials</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Semiconductor(material)</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="1" l="FRE"><s0>Hétérojonction</s0>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="1" l="ENG"><s0>Heterojunctions</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Cuivre séléniure</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium séléniure</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Cuivre sulfure</s0>
<s5>20</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Copper sulfide</s0>
<s5>20</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Cobre sulfuro</s0>
<s5>20</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Indium sulfure</s0>
<s5>21</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>21</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>21</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Cu In Se</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>CuInSe2</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Cu In S</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>CuInS2</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>8560G</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>AgInS2</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Ag In S</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>CuGaS2</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Cu Ga S</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>Inorganic compound</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto inorgánico</s0>
<s5>48</s5>
</fC07>
<fC07 i1="02" i2="1" l="FRE"><s0>Métal transition composé</s0>
<s5>49</s5>
</fC07>
<fC07 i1="02" i2="1" l="ENG"><s0>Transition metal compounds</s0>
<s5>49</s5>
</fC07>
<fN21><s1>336</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Novel I-III-VI2 semiconductor-native protein structures and their photosensitivities

Novel I-III-VI2 semiconductor-native protein structures and their photosensitivities

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri